Hasanah Safein Shafie^1,a, Julie Juliewatty Mohamed^1,b,*, Md Fadzil Ain^2,c, Nor Fadzilah Mohamed^3,d, Mohamed Johari Abu^3,e, Galih Rineksa^4,f

¹Faculty of Bioengineering And Technology (FBKT), Universiti Malaysia Kelantan (UMK), Jeli Campus, 02600 Jeli, Kelantan, Malaysia

²Department of Mathemetics Science And Computer (JMSK), Politeknik Kota Bharu, 16450 Ketereh, Kelantan, Malaysia

³School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Kampus Kejuruteraan 14300 Nibong Tebal Pulau Pinang, Malaysia

⁴Deparment of Chemical Engineering, Faculty of Engineering, Universitas Indonesia, Depok 16425 Indonesia
 

Abstract. In recent years, the doping process of dielectric materials has garnered significant attention due to its profound impact on material properties and its vast applications in electronics, energy storage, and sensing devices. This review systematically explores the stoichiometric calculations involved in the doping of dielectric materials, providing a comprehensive analysis of recent advancements and methodologies. The primary problem addressed is the challenge of accurately determining and controlling the stoichiometry during the doping process to achieve desired material properties. To achive this we conducted extensive searching of  scholarly article using 2008-2024. Utilizing the PRISMA framework for systematic literature reviews, we meticulously analyzed numerous studies focusing on various doping methods, materials, and their resultant properties. The flow of study based on PRISMA framework. By analyzing a comprehensive selection using advanced searching approached on Scopus and Emerald database found (n=39) final primary data was analysed. Our methodology included a detailed examination of experimental setups, computational simulations, and theoretical models used to predict and verify stoichiometric ratios. The finding was devide to three thema which (1) Synthesis Techniques and Material Properties(2) Chemical Reactions and Kinetics/ Synthesis Methods and Reactivity(3) Material Characterization and Applications.Numerical results from these studies highlight the crucial role of precise stoichiometric control in optimizing dielectric properties such as permittivity, breakdown strength, and thermal stability. Key findings indicate that advanced techniques like first-principles simulations, combined with innovative experimental approaches, significantly enhance the predictability and efficiency of the doping process. This review also identifies gaps in the current research, suggesting areas for future investigation, such as the exploration of novel dopants and the development of more accurate predictive models. In conclusion, this structured review underscores the importance of stoichiometric calculations in the doping process of dielectric materials and provides a foundation for future research aimed at advancing material performance through precise stoichiometric control.

Keywords: Stoichiometric Calculation, Dielectric, Doping, Enhancement